- صفحه اصلی
 - دانلود دیتاشیت
 - دیتاشیت FDB14AN06LA0-F085
 
دیتاشیت FDB14AN06LA0-F085
مشخصات دیتاشیت
| نام دیتاشیت | FDB14AN06LA0-F085 | 
|---|---|
| حجم فایل | 785.206 کیلوبایت | 
| نوع فایل | |
| تعداد صفحات | 11 | 
														دانلود دیتاشیت FDB14AN06LA0-F085 | 
													FDB14AN06LA0-F085 Datasheet | 
|---|
مشخصات
- RoHS: true
 - Type: N Channel
 - Category: Triode/MOS Tube/Transistor/MOSFETs
 - Datasheet: onsemi FDB14AN06LA0-F085
 - Operating Temperature: -55°C~+175°C@(Tj)
 - Power Dissipation (Pd): 125W
 - Total Gate Charge (Qg@Vgs): 24nC@5V
 - Drain Source Voltage (Vdss): 60V
 - Input Capacitance (Ciss@Vds): 2.9nF@25V
 - Continuous Drain Current (Id): 60A
 - Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
 - Reverse Transfer Capacitance (Crss@Vds): 115pF@25V
 - Drain Source On Resistance (RDS(on)@Vgs,Id): 10.2mΩ@10V,67A
 - Package: TO-263AB
 - Manufacturer: onsemi
 - Series: Automotive, AEC-Q101, PowerTrench®
 - Packaging: Cut Tape (CT)
 - Part Status: Active
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 60V
 - Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
 - Rds On (Max) @ Id, Vgs: 11.6mOhm @ 67A, 10V
 - Vgs(th) (Max) @ Id: 3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
 - Vgs (Max): ±20V
 - Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
 - FET Feature: -
 - Power Dissipation (Max): 125W (Tc)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263AB
 - Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 - Base Part Number: FDB14
 - detail: N-Channel 60V 67A (Tc) 125W (Tc) Surface Mount TO-263AB